![na xps peak na xps peak](https://www.researchgate.net/profile/Rochet-Francois/publication/276694188/figure/fig2/AS:294522228625410@1447230979149/Na-2s-XPS-spectra-of-saturated-sodium-chloride-6M-sodium-bromide-and-sodium-iodide_Q320.jpg)
Average threshold value for our samples was around 40%. Laplacian algorithm was used to mark the grains and estimated the grain size by selecting the appropriate threshold that would result in a maximum number of grains in the grain statistics. Three-point leveling was applied to remove the unevenness in the appearance of the raw image that is due to small tilt in the substrate.
#NA XPS PEAK SOFTWARE#
Gwyddion software was used to analyze the AFM images and estimate the grain size from the AFM images.
![na xps peak na xps peak](https://www.mdpi.com/batteries/batteries-04-00036/article_deploy/html/images/batteries-04-00036-g003.png)
Surface morphology of the films was studied by the atomic force microscope (AFM) using non-contact or tapping mode of Veeco Innova diSPM. The crystallinity of the film was analyzed by x-ray diffraction by Shimadzu XRD-6000 diffractometer using Cu Kα radiations of wavelength 1.548 Å. In this paper, we report the growth of Zn 3N 2 by radio frequency (RF) magnetron sputtering at different nitrogen to argon gas flow rate ratios to find the optimum growth condition and x-ray photoelectron spectroscopy (XPS) depth profile analysis of the grown samples. These properties make Zn 3N 2 an interesting material to study. Zinc nitride can be used for deposition of thin transparent, conducting films of p-type ZnO which have excellent applications in light-emitting diodes, laser diodes, and cheap solar cells. A relatively stable way of fabricating p-type ZnO could be to replace nitrogen with oxygen in Zn 3N 2. The fabrication of a reliable p-type ZnO is still an unresolved issue there have been different attempts of doping ZnO with different group V elements. Zn 3N 2 is a better substitute of Si for fabrication of thin-film transistors (TFT) than other materials like zinc oxide and graphene. They concluded that wide band gap is due to large ionicity of Zn 3N 2.
![na xps peak na xps peak](https://www.researchgate.net/publication/331217360/figure/download/fig5/AS:961437136613376@1606235884018/XPS-spectrum-of-the-PM10-sample-showing-peaks-for-O-C-Na-Zn-Ba-Ca-and-N-atoms.png)
Their Zn 3N 2 films were cubic in structure with lattice constant of 0.978 nm and optical band gap of 3.2 eV. on quartz substrate by using zinc target and ammonia as the reacting gas. Zn 3N 2 thin films were first prepared by Kuriyama et al. The optical band gap varies between 1.23 and 3.2 eV which is still controversial. Zn 3N 2 is an n-type semiconductor with either direct or indirect band gap depending upon the deposition techniques and ambient conditions.
![na xps peak na xps peak](https://pages.jh.edu/chem/fairbr/surfacelab/xps8.gif)
Zn 3N 2 has recently attracted much attention because of its high transparency, high electron conductivity, and its potential use in optoelectronics, sensors, and renewable energy. Depth profile XPS analyses of the films reveal that there is less nitrogen in the bulk of the film compared to the nitrogen on the surface of the film whereas more oxygen is present in the bulk of the films possibly occupying the nitrogen vacancies. X-ray photoelectron study was performed to confirm the formation of Zn–N bonds and to study the presence of different species in the film. Hall effect measurements reveal that films are n-type semiconductors, and the highest carrier concentration and Hall mobility was achieved for the films grown at N 2/Ar ratio of 0.60. Highly aligned films were achieved at N 2/Ar ratio of 0.60. Zn 3N 2 samples grown at lower N 2/Ar ratio are polycrystalline with secondary phases of ZnO present, whereas at higher N 2/Ar ratio, no ZnO phases were found. All the samples have grain-like surface morphology with an average surface roughness ranging from 4 to 5 nm and an average grain size ranging from 13 to16 nm. Films were grown at different N 2/Ar flow rate ratios of 0.20, 0.40, 0.60, 0.80, and 1.0. Zinc nitride thin films were grown on fused silica substrates at 300 ☌ by radio frequency magnetron sputtering.